Preparation and Characterization of Indium‐Tin‐Oxide Deposited by Direct Thermal Evaporation of Metal Indium and Tin

摘要: Films of the transparent conductor-tin-oxide (ITO) have been deposited successfully by direct thermal evaporation metallic indium and tin in an oxygen ambient. Various techniques, such as scanning transmission electron microscopy, x-ray diffraction, microprobe analysis, Hall measurements, optical were applied to determine crystal structure measure grain size, concentration, transmittance, mobility ITO films. It is found that key point reducing resistivity film controlling weight ratio optimum value 3 1. films with low 1.8 x 10/sup -4/ ..cap omega..-cm average transmittance high 90% can be achieved reproducibly. The are polycrystalline a bcc size approximately 500A.