Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy
作者： P.W. Fry , M.S. Skolnick , D.J. Mowbray , I.E. Itskevich , J.J. Finley
DOI: 10.1016/S1386-9477(00)00184-3
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摘要: Abstract The power of photocurrent spectroscopy to study the electronic properties InAs/GaAs self-assembled quantum dots is described. From comparison results from different samples it shown that provides a direct means measure absorption spectra dots. Studies in high-electric field enable electron–hole vertical alignment be determined. Most surprisingly this found opposite predicted by all recent predictions. Comparison with theory shows can only explained if contain significant amounts gallium, and have severely truncated shape. nature ground excited state transitions, carrier escape mechanisms in-plane anisotropies are also
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