Photo-voltage in InGaAs/GaAs heterostructures with one-dimensional nanostructures
作者： Marianna S. Kovalova , Serhiy V. Kondratenko , Colin S. Furrow , Vasyl P. Kunets , Morgan E. Ware
DOI: 10.1117/12.2051881
关键词:
摘要: Materials with one-dimensional quantum structures are promising for their application in solar cells. The photo-voltage generation of these is caused by spatial separation electron-hole pairs a built-in electric field the GaAs p-i-n junction. The InGaAs/GaAs sample shows significantly higher photo-voltage the spectral range 1.25-1.37 eV, as compared to reference p-n junction, due interband transitions the quantum wires (QWRs).
harvard.edu
sci-hub.se 参考文章(33)
W.-H. Chang, T. M. Hsu, C. C. Huang, S. L. Hsu, C. Y. Lai, N. T. Yeh, T. E. Nee, J.-I. Chyi, Photocurrent studies of the carrier escape process from InAs self-assembled quantum dots Physical Review B. ,vol. 62, pp. 6959- 6962 ,(2000) , 10.1103/PHYSREVB.62.6959
P.W. Fry, M.S. Skolnick, D.J. Mowbray, I.E. Itskevich, J.J. Finley, L.R. Wilson, K.L. Schumacher, J.A. Barker, E.P. O'Reilly, M. Al-Khafaji, A.G. Cullis, M. Hopkinson, J.C. Clark, G. Hill, Electronic properties of InAs/GaAs self-assembled quantum dots studied by photocurrent spectroscopy Physica E-low-dimensional Systems & Nanostructures. ,vol. 9, pp. 106- 113 ,(2001) , 10.1016/S1386-9477(00)00184-3
A. Nasr, Performance of quantum wire infrared photodetectors under illumination conditions Optics and Laser Technology. ,vol. 41, pp. 871- 876 ,(2009) , 10.1016/J.OPTLASTEC.2009.03.001
H. Pettersson, J. Trägårdh, A. I. Persson, L. Landin, D. Hessman, L. Samuelson, Infrared photodetectors in heterostructure nanowires. Nano Letters. ,vol. 6, pp. 229- 232 ,(2006) , 10.1021/NL052170L
Zhonghui Chen, Eui-Tae Kim, Anupam Madhukar, Normal-incidence voltage-tunable middle- and long-wavelength infrared photoresponse in self-assembled InAs quantum dots Applied Physics Letters. ,vol. 80, pp. 2490- 2492 ,(2002) , 10.1063/1.1467974
Yu I Mazur, V G Dorogan, E Marega, P M Lytvyn, Z Ya Zhuchenko, G G Tarasov, G J Salamo, One-dimensional features of In(Ga)As/GaAs dot chain structures with changeable interdot coupling New Journal of Physics. ,vol. 11, pp. 043022- ,(2009) , 10.1088/1367-2630/11/4/043022
S-W Lee, T G Kim, K Hirakawa, J S Kim, S-H Choi, H Y Cho, Lateral photoconductivity and bound states of self-assembled Ge/Si quantum dots Nanotechnology. ,vol. 18, pp. 105403- ,(2007) , 10.1088/0957-4484/18/10/105403
Antonio Luque, Antonio Martí, Increasing the Efficiency of Ideal Solar Cells by Photon Induced Transitions at Intermediate Levels Physical Review Letters. ,vol. 78, pp. 5014- 5017 ,(1997) , 10.1103/PHYSREVLETT.78.5014
K. W. J. Barnham, G. Duggan, A new approach to high‐efficiency multi‐band‐gap solar cells Journal of Applied Physics. ,vol. 67, pp. 3490- 3493 ,(1990) , 10.1063/1.345339
Yu I Mazur, Zh M Wang, GG Tarasov, H Wen, V Strelchuk, D Guzun, M Xiao, GJ Salamo, TD Mishima, Guoda D Lian, MB Johnson, None, Strong optical nonlinearity in strain-induced laterally ordered In0.4Ga0.6As quantum wires on GaAs (311)A substrate Journal of Applied Physics. ,vol. 98, pp. 053711- ,(2005) , 10.1063/1.2039999