Strong optical nonlinearity in strain-induced laterally ordered In0.4Ga0.6As quantum wires on GaAs (311)A substrate
作者： Yu I Mazur , Zh M Wang , GG Tarasov , H Wen , V Strelchuk
DOI: 10.1063/1.2039999
关键词:
摘要: Strain-induced laterally ordered In0.4Ga0.6As on (311)A GaAs template quantum wires have been fabricated and identified with cross-section transmission electron microscopy technique to be of average length ∼1μm, width height 23 2nm, respectively, under InGaAs coverage six monolayers. The photoluminescence spectrum a sample demonstrates unusually strong optical nonlinearity even at moderate excitation densities. excitonic peak energy blueshifts by ∼25meV without essential contribution the wire excited states elevating density. Strong decrease polarization anisotropy increase are attributed combined action phase-space filling effects screening internal piezoelectric field free carriers.
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