Effect of dimensionality and morphology on polarized photoluminescence in quantum dot-chain structures
作者： P. M. Lytvyn , Z. Ya. Zhuchenko , G. G. Tarasov , G. J. Salamo , Yu. I. Mazur
DOI: 10.1063/1.4759318
关键词:
摘要: Change of the photoluminescence (PL) polarization is studied by changing excitation intensity and temperature for aligned In(Ga)As quantum dot (QD) structures with varying inter-dot distances grown molecular beam epitaxy on semi-insulating GaAs (100) substrates. An unusual increase ratio observed increasing and/or throughout a low (T < 70 K) (Iex 1 W/cm2) range. This as well general behavior polarized PL are results exciton dynamics peculiarities system morphology. They due to which change from zero-dimensional comprised isolated QDs one-dimensional wire-like structures.
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