Tailoring the photoluminescence polarization anisotropy of a single InAs quantum dash by a post-growth modification of its dielectric environment
作者： P. Mrowiński , K. Tarnowski , J. Olszewski , A. Somers , M. Kamp
DOI: 10.1063/1.4961044
关键词: Materials science 、 Exciton 、 Dielectric 、 Photoluminescence 、 Common emitter 、 Polarization (waves) 、 Linear polarization 、 Optoelectronics 、 Anisotropy 、 Isotropy
摘要: Excitonic emission from single InAs/InGaAlAs/InP quantum dashes has been investigated in terms of controlling the polarization anisotropy by altering shape processed sub-micrometer mesa structures. Photoluminescence measured exemplary emitting around 1.3 and 1.55 μm placed inside rectangular mesas various orientation, asymmetry, sizes. The detected degree linear bright exciton ranges −0.1 to ca. 0.55, compared 0.25 for unaltered or isotropic in-plane dielectric surrounding. These results are interpreted numerical simulations using an emitter coupled with a optical mode such outgoing direction normal sample surface.
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