Ultrafast carrier capture dynamics in InGaAs∕GaAs quantum wires

作者: DG Cooke , FA Hegmann , Yu I Mazur , Zh M Wang , W Black

DOI: 10.1063/1.2831024

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摘要: We use time-resolved terahertz-pulse spectroscopy to study the ultrafast carrier dynamics in InGaAs∕GaAs (311)A quantum wires. Anisotropy photoconductive is observed when aligning terahertz probe polarization parallel versus perpendicular wire direction. The origin of this anisotropy capture into localized quantum-wire states from delocalized wetting layer or barrier regions over time scales 6to30ps. efficiency found be strongly temperature dependent, with thermal emission dominating above 125K, while state-filling effects within wires influence rate below 125K. Transient reveals a Drude-like conductivity.

参考文章(41)
Photophysics of Molecular Materials From Single Molecules to Single Crystals Photophysics of Molecular Materials: From Single Molecules to Single Crystals. pp. 600- ,(2005) , 10.1002/3527607323
J. Christen, M. Grundmann, E. Kapon, E. Colas, D. M. Hwang, D. Bimberg, Ultrafast carrier capture and long recombination lifetimes in GaAs quantum wires grown on nonplanar substrates Applied Physics Letters. ,vol. 61, pp. 67- 69 ,(1992) , 10.1063/1.107671
Frank A. Hegmann, Kristine P. Lui, Optical pump-terahertz probe investigation of carrier relaxation in radiation-damaged silicon-on-sapphire Ultrafast Phenomena in Semiconductors VI. ,vol. 4643, pp. 31- 41 ,(2002) , 10.1117/12.470433
N Sawaki, R Sugimoto, T Hori, Electron mobility in quasi-one-dimensional structures Semiconductor Science and Technology. ,vol. 9, pp. 946- 950 ,(1994) , 10.1088/0268-1242/9/5S/146
Yu I Mazur, Zh M Wang, GG Tarasov, H Wen, V Strelchuk, D Guzun, M Xiao, GJ Salamo, TD Mishima, Guoda D Lian, MB Johnson, None, Strong optical nonlinearity in strain-induced laterally ordered In0.4Ga0.6As quantum wires on GaAs (311)A substrate Journal of Applied Physics. ,vol. 98, pp. 053711- ,(2005) , 10.1063/1.2039999
J. J. H. Pijpers, E. Hendry, M. T. W. Milder, R. Fanciulli, J. Savolainen, J. L. Herek, D. Vanmaekelbergh, S. Ruhman, D. Mocatta, D. Oron, A. Aharoni, U. Banin, M. Bonn, Carrier Multiplication and Its Reduction by Photodoping in Colloidal InAs Quantum Dots Journal of Physical Chemistry C. ,vol. 111, pp. 4146- 4152 ,(2007) , 10.1021/JP066709V
R. P. Prasankumar, A. Scopatz, D. J. Hilton, A. J. Taylor, R. D. Averitt, J. M. Zide, A. C. Gossard, Carrier dynamics in self-assembled ErAs nanoislands embedded in GaAs measured by optical-pump terahertz-probe spectroscopy Applied Physics Letters. ,vol. 86, pp. 201107- ,(2005) , 10.1063/1.1923174
A. Richter, G. Behme, M. Süptitz, Ch. Lienau, T. Elsaesser, M. Ramsteiner, R. Nötzel, K. H. Ploog, Real-Space Transfer and Trapping of Carriers into Single GaAs Quantum Wires Studied by Near-Field Optical Spectroscopy Physical Review Letters. ,vol. 79, pp. 2145- 2148 ,(1997) , 10.1103/PHYSREVLETT.79.2145
M. Walther, E. Kapon, C. Caneau, D. M. Hwang, L. M. Schiavone, InGaAs/GaAs strained quantum wire lasers grown by organometallic chemical vapor deposition on nonplanar substrates Applied Physics Letters. ,vol. 62, pp. 2170- 2172 ,(1993) , 10.1063/1.109458
H Wen, Zh M Wang, GJ Salamo, None, Atom-resolved scanning tunneling microscopy of (In,Ga)As quantum wires on GaAs(311)A Applied Physics Letters. ,vol. 84, pp. 1756- 1758 ,(2004) , 10.1063/1.1664018