On-Line Ion Implantation: The SIMS Primary Ion Beam for Creation of Empirical Quantification Standards

摘要: The variation in ionization probability and sputter yield with changes matrix composition SIMS demands a quantification standard that matches of the sample interest order to obtain most accurate quantitative analyses. To this end, ion implantation is commonly used create external standards, and, case analytes are homogeneously distributed depth, superimposed internal standards [1]. Publications suggested development an in-situ gun for instruments [2] use concentration profile continuously implanted primary beam LTE [3] motivated CAMECA IMS 3f laboratory two-step, on-line implantation/depth carbon silicon [4], result hydrocarbon contamination chemical vapor deposition process. empirical determination performed by superimposing 20 keV C+ implant at 40 nA upon residual levels Si matrix, followed depth area O2 + beam. Both beams produced from CO2 were resolved mass analyzer, so entire experiment was vacuo. This pilot illustrates such creates excellent accuracy precision comparison conventional high-energy standards. ability quantify demand supervise purity dose attractive benefits analytical scheme.