Spatial resolution in x-ray microanalysis of thin foils in stem

摘要: The influence of electron scattering in the spatial resolution X-ray microanalysis thin foils silicon has been measured as a function specimen thickness and accelerating voltage. experimental observations show that high angle elastic controls this is not influenced by diffraction conditions. Monte Carlo calculations have also carried out general form theoretical results are good agreement. For foil thicknesses normally used defect analysis silicon, ~5000 A, experiment (taken region within which 90% signal generated) about 700 A at 100 kV 1800 40 kV.