Novel Design for RF MEMS Capacitive Shunt Switch in K and Ku Bands

摘要: A novel design for RF MEMS Capacitive Shunt Switch with operating bandwidth in the K and Ku bands is presented this paper. The switch has got lower insertion loss than a normal there no compromise on isolation of switch. resonant frequency proposed kept constant near 20GHz which midpoint comparative study done. improvement been achieved by introducing discontinuities coplanar waveguide both central conductor ground planes. are represented terms equivalent lumped parameters. new method obtaining parameters step planes using full wave electromagnetic simulation also presented.