n-type a-Si:H layers applied to the back side of heterojunction solar cells: Experimental and simulation analysis
作者： S. Martín de Nicolás , J. Coignus , W. Favre , J.P. Kleider , D. Muñoz
DOI: 10.1016/J.SOLMAT.2013.03.010
关键词:
摘要: In this work, we focus on the comprehension and optimization of rear side n-type amorphous/crystalline (a-Si:H/c-Si) heterojunction solar cells. The back amorphous stack role heterointerface have been investigated in order to elucidate basic mechanisms governing device performance. Thus, thin silicon films with different phosphorous contents deposited by PECVD extensively characterised (optical, electrical, structural properties studied). Moreover, passivation interface such a-Si:H crystalline surface also Quasi-Steady-State Photoconductance (QSSPC) measurements. effect doping content back-surface-field was deeply analysed simulated explain observed tendencies cell precursors. influence defect density activation energy carrier transport varying layers has widely investigated. Furthermore, optimized cells fabricated an efficiency 20.5% 148 cm2 wafer achieved.
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