Interface states study of intrinsic amorphous silicon for crystalline silicon surface passivation in HIT solar cell
作者： You-Peng Xiao , Xiu-Qin Wei , Lang Zhou
DOI: 10.1088/1674-1056/26/4/048104
关键词: Amorphous silicon 、 Heterojunction 、 Amorphous solid 、 Crystalline silicon 、 Optoelectronics 、 Solar cell 、 Passivation 、 Nanocrystalline silicon 、 Materials science 、 Carrier lifetime
摘要: Intrinsic hydrogenated amorphous silicon (a-Si:H) film is deposited on n-type crystalline (c-Si) wafer by hot-wire chemical vapor deposition (HWCVD) to analyze the amorphous/crystalline heterointerface passivation properties. The minority carrier lifetime of symmetric heterostructure measured using Sinton Consulting WCT-120 tester system, and a simple method determining interface state density from measurement proposed. also performed deep-level transient spectroscopy (DLTS) prove validity method. microstructures hydrogen bonding configurations a-Si:H films with different dilutions are investigated spectroscopic ellipsometry (SE) Fourier transform infrared (FTIR) respectively. Lower values obtained more uniform, compact fewer bulk defects HWCVD.
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