Properties of the c-Si/Al2O3 interface of ultrathin atomic layer deposited Al2O3 layers capped by SiNx for c-Si surface passivation
作者： D. Schuldis , A. Richter , J. Benick , P. Saint-Cast , M. Hermle
DOI: 10.1063/1.4903483
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摘要: This work presents a detailed study of c-Si/Al2O3 interfaces ultrathin Al2O3 layers deposited with atomic layer deposition (ALD), and capped SiNx plasma-enhanced chemical vapor deposition. A special focus was the characterization fixed charge density these dielectric stacks interface defect as function thickness for different ALD processes (plasma-assisted thermal ALD) post-deposition treatments. Based on theoretical calculations extended Shockley–Read–Hall model surface recombination, properties were found to explain well experimentally determined recombination. Thus, provide fundamental insights into passivation mechanisms Al2O3/SiNx stacks, stack system highly relevant, particularly high efficiency silicon solar cells. findings, it also possible improve passi...
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