Improved evaluation of saturation currents and bulk lifetime in industrial Si solar cells by the quasi steady state photoconductance decay method
作者： Binhui Liu , Yifeng Chen , Yang Yang , Daming Chen , Zhiqiang Feng
DOI: 10.1016/J.SOLMAT.2016.01.032
关键词:
摘要: Abstract For understanding and improving the performance of industrial Si solar cells, it helps to quantify losses in various device parts very precisely, because this enhances predictive power roadmaps deduced from such analysis. We show how precision commonly applied methods for measuring saturation current density, J0, can be noticeably improved. Firstly, two are compared determining optical properties samples specifically made lifetime measurements. Secondly, is evaluated, which excess carrier density level best choose extracting J0 regions. Thirdly, bulk extracted by a combination measurements modeling surface passivation.
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