Investigation on high mobility nanocrystalline Si with crystalline Si heterostructure
作者： Wensheng Wei , Tianmin Wang , Yuliang He
DOI: 10.1016/J.SPMI.2006.12.002
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摘要: Abstract A heterostructure of n-type hydrogenated nanocrystalline silicon (nc-Si:H) film with p-type crystalline silicon, i.e., (n)nc-Si:H/(p)C-Si, was fabricated to investigate carrier characteristics and transport. After electrical experiments, information, such as hole electron well 2-dimension electronic gas in the studied system, identified respectively. The forward current conduction analyzed while reverse transport distinguished different mechanisms within range negative applied voltage. performed study also leads us ascribe main origin short transient times on produced structure a tunneling mechanism.
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