Fabrication and properties of low-temperature (⩽600 °C) processed n-type nanocrystalline SiC/p-type crystalline Si heterojunction diodes

摘要: Silicon carbide layers were grown on Si at 600 °C by magnetron sputtering in a pure hydrogen plasma. The transmission-electron-microscopic observations reveal high crystallization degree and the formation of SiC nanocrystals ∼5 nm average size. nanocrystalline was used to fabricate SiC/Si heterojunction diodes which show good performance with rectification ratio ∼104 ±2 V low leakage current. behavior this latter temperature suggests that it is due thermal emissions amplified Poole–Frenkel effect.