Selective Fabrication of SiC/Si Diodes by Excimer Laser Under Ambient Conditions
作者： A. Kaur , P. Chahal , T. Hogan
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摘要: This letter presents SiC/Si diodes fabricated by the selective growth of SiC on Si substrate under ambient (atmospheric) conditions. The $\beta $ -SiC was obtained irradiating a high-power KrF excimer laser beam polymethyl methacrylate (PMMA)-coated wafer. decomposed carbon atoms from PMMA, which dissolve into molten to form SiC. Raman spectrum grown samples shows dominant band in range 930–990 cm $^{-1}$ , i.e., spectral region characteristic for -SiC. quality can be optimized changing induced power. best performing diode good rectification ratio $\sim 3 \times 10^{4}$ (±1 V), low leakage current density 1~\mu \text{A}$ /cm2 (−1 and high breakdown (>200 confirms interface. doping calculated 1/ $C ^{2}$ versus $V$ plot found 5 10^{15}$ $^{-3}$ . In addition, measured photoelectric response short circuit 17 mA/cm2, an open voltage 0.33 V, fill factor 62%.
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