Excimer laser-induced doping of crystalline silicon carbide films
作者： S. Krishnan , G.C. D'Couto , M.I. Chaudhry , S.V. Babu
关键词: Dopant 、 Silicon carbide 、 Nanocrystalline silicon 、 Fluence 、 Materials science 、 Carbide 、 Boron 、 Analytical chemistry 、 Doping 、 Excimer laser
摘要: 0.25 μm thick, single crystal, n -type, silicon carbide (β-SiC) films thermally grown on p -type Si(100) were doped with boron by using KrF excimer laser radiation and a spin-on dopant concentration of 10 20 /cm 3 . The threshold fluence for the doping to occur was approximately 0.08 J/cm 2 Similarly, -SiC/ -SiC diodes fabricated laser-induced single-crystal β-SiC ( 6 thick) Si(100). obtained at showed good rectifying characteristics. surface modification and/or ablation 0.3 , indicating that diode formation have be accomplished within window -0.3 these films.
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