Three-dimensional simulation of impurity diffusion in thin-film diffusion barriers

摘要: Three-dimensional (3D) simulation of combined lattice and grain-boundary diffusion impurities in thin-film barriers for eemiconductor device metallizations is performed. Calculated results impurity concentration profiles demonstrate quantitatively an obvious underestimation the frequently used two-dimensional (2D) analysis with respect to influence film geometry coefficient. As average at backside barriers, approximately a factor two difference between 2D 3D found over interesting range times grain size structures. Graphs predicting effectiveness are presented several normalized parameters associated position time. Particular application examples aluminum titanium nitride films justify use this material as effective barrier silicon microelectronic devices.