Excess dissipation in a single-electron box: the Sisyphus resistance.
作者： F. Persson , C. M. Wilson , M. Sandberg , G. Johansson , P. Delsing
DOI: 10.1021/NL903887X
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摘要: We present measurements of the ac response a single-electron box (SEB). apply radio frequency signal with larger than tunneling rate and drive system out equilibrium. observe much more dissipation in SEB then one would expect from simple circuit model. can explain this terms mechanism that we call Sisyphus resistance. The resistance has strong gate dependence which be used for electrometery applications.
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