Ultra-thin body vertical tunneling transistor
作者： Leonard Forbes
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摘要: A vertical tunneling, ultra-thin body transistor is formed on a substrate out of oxide pillar having active regions opposing conductivity opposite ends the pillar. In one embodiment, source region p+ in under and drain an n+ at top gate structure along sidewalls over layers. The operates by electron tunneling from valence band to bias-induced n-type channels, silicon bodies, thus resulting current.
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