Sublithographic width finFET employing solid phase epitaxy
作者： Ravi M. Todi , Kangguo Cheng , Geng Wang , Joseph Ervin , Chengwen Pei
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摘要: A dielectric mandrel structure is formed on a single crystalline semiconductor layer. An amorphous material layer deposited the physically exposed surfaces of and structure. Optionally, can be implanted with at least one different material. Solid phase epitaxy performed employing as seed layer, thereby forming an epitaxial uniform thickness. Remaining portions are fins thickness these sublithographic. After removal structure, employed to form device.
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