作者: S. Fukuda , S. Kato , M. Mohri , T. Yamashina
DOI: 10.1016/0022-3115(82)90316-6
关键词:
摘要: Abstract Changes in the composition of well defined surface low-Z carbides have been studied with use Auger electron spectroscopy. Polycrystalline B4C a stoichiometric bulk and single crystals TiC (001) plane SiC (0001) were used as samples for quantitative analysis. Comparisons properties these materials made by various treatments such ion bombardment argon (3 keV, 8 μA/cm2) heating up to 1000°C under ultra-high vacuum. In case B4C, carbon atoms segregated on increase temperature while segregation boron took place. The ratios B/C examined at 2.6 4.4 without bombardment, respectively. surface, other hand, was very stable against heat treatment no observed even 1000°C. However, slightly atomic ratio Ti/C 0.87. SiC, significant Si/C less than 0.3 this tendency retarded 0.6 same temperature.