Low-frequency dielectric response of the charge-density wave in ( TaSe 4 ) 2 I

摘要: We have found the charge-density wave (CDW) in (${\mathrm{TaSe}}_{4}$${)}_{2}$I to display a low-frequency dielectric relaxation characterized by distribution of times. The mean times vary between approximately ${10}^{\mathrm{\ensuremath{-}}4}$ and ${10}^{\mathrm{\ensuremath{-}}8}$ sec temperature range 90 180 K, an Arrhenius dependence with same activation energy (1436 K) as normal resistivity. This is only material thus far studied where such straightforward connection CDW band gap has been observed.