The origin of evolutionary device performance for GeGaInOx thin film transistor as a function of process pressure
作者： Byung Du Ahn , Kwun-Bum Chung , Jin-Seong Park
DOI: 10.1007/S10832-014-9978-1
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摘要: This paper addresses changes in device performance for GeGaInOx (GGIO) thin film transistors deposited as a function of process pressures, and the mechanisms responsible for …
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