Dislocation multiplication mechanisms in low‐misfit strained epitaxial layers
作者： R. Beanland
DOI: 10.1063/1.359151
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摘要: The origin of misfit dislocations in significantly relaxed low‐misfit strained layers is considered. characteristics strain relief due to heterogeneous dislocation nucleation at particles, the free surface layer, and multiplication mechanisms are considered compared with observed relaxation behavior constant composition InxGa1−xAs on (001) GaAs. It proposed that consistent a wide range experimental results. observation 60° edge often seen lying above, but parallel to, interface has prompted study possible they may form. shown one four reactions between lead pair spiral sources, single source operates only once form end dislocations.
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