STM and AFM Studies of Layered Materials: General

摘要: In 1982, G. Binnig, H. Rohrer, Ch. Gerber and E. Weibel [1, 2, 3] reported on the first successful vacuum tunneling experiments between a sample surface an atomically sharp probing tip which can be raster scanned across in atomic dimensions by means of piezoelectric transducers. A novel, powerful tool for studying local properties conducting samples down to scale was born: scanning microscope (STM). Since then, science has profited remarkably from ability STM map electronic structure directly real space. For instance, several reconstructions particularly semiconductor surfaces were solved; imperfections such as point defects, steps, dislocations grain boundaries characterized scale; adsorbed chemisorbed species even physical supported clusters fiat substrates studied locally STM.