作者: K. I. Kugel , V. A. Kulbachinskii , B. A. Aronzon , V. Tripathi , A. B. Davydov
DOI: 10.1038/SREP17158
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摘要: The temperature and magnetic field dependences of the anomalous Hall effect (AHE) are studied in Mn delta-doped semiconductor heterostructures with a two-dimensional hole gas quantum well interacting layer. analysis experimental data reveals four distinct ranges differing behavior AHE. layer induces an inhomogeneity leading to interplay between hopping drift conductivities. It is shown that at sufficiently low temperatures, conductivity favors mechanisms AHE related geometric (Berry-Pancharatnam) phase.