Photodetectors employing germanium layers

作者: Matthias Bauer

DOI:

关键词:

摘要: A germanium-based photodetector comprises a p- (or n-type) germanium layer, an intrinsic single crystal layer formed on the n-) type and n- p-type) layer. An electrically conductive contact extends vertically from upper surface of device downward to buried Electrodes define front side contacts.

参考文章(69)
Claes Björkman, Samuel Broydo, Lawrence C. West, Dan Maydan, Optical-ready wafers ,(2002)
Eugene Y. Ma, Matthias Wagner, Sigurd Wagner, Adam M. Payne, Semitransparent optical detector including a polycrystalline layer and method of making ,(2001)
Mark A. Stan, Doug Collins, Paul R. Sharps, Daniel J. Aiken, An apparatus and method for integral bypass diode in solar cells ,(2002)
Richard A. Soref, Lionel R. Friedman, Silicon-based strain-symmetrized GE-SI quantum lasers ,(1997)
William Matthew Pfenninger, Howard Wing Hoon Lee, Alan Hap Chin, Optical devices with engineered nonlinear nanocomposite materials ,(2004)
Nasser H. Karam, James H. Ermer, Li Cai, Bruce T. Cavicchi, Moran Haddad, Multilayer semiconductor-structure with phosphide-passivated germanium substrate ,(2000)
Howard Wing Hoon Lee, Majid Keshavarz, Nanocomposite materials with engineered properties ,(2002)
Anna Fontcuberta i Morral, Harry A. Atwater, James M. Zahler, Wafer bonded virtual substrate and method for forming the same ,(2004)