Dry-Etching Mechanism of SputteredPb(Zr1-xTix)O3Film
作者： Naokatsu Ikegami , Takayuki Matsui , Jun Kanamori
DOI: 10.1143/JJAP.35.2505
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摘要: The Pb(Zr 1-x Ti x )O 3 (PZT) etching mechanism involving an ion-assisted reaction in a Cl 2 helicon wave plasma environment was studied terms of the physical-bombardment-induced structural change film and chemical interaction damaged surface with halogen. In-situ X-ray photoelectron spectroscopic analysis 1 keV-Ar + -irradiated PZT used combination Rutherford backscattering spectrometry revealed that physical bombardment preferentially breaks Pb-O bonds, releasing Pb crystal which is subsequently sputtered from surface, resulting low concentration on surface. Thermal study at 600°C -, F - Ar -implanted using diffraction indicated induced initiates subsequent existing halogen accompanied by film.
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