Thermal and thermoelectric behavior of silicon-germanium quantum well structures
作者： M. N. Tripathi , C. M. Bhandari
DOI: 10.1140/EPJB/E2007-00311-4
关键词:
摘要: Tailoring thermoelectric materials for specific designs and applications has been gaining momentum during past three decades. Initially confined to conventional (bulk) framework an entirely new scenario emerged with inclusion of low-dimensional structures in the scheme things. The paper examines effect size reduction on phonon electron properties two-dimensional (quantum well) aim maximize performance. formulation applied silicon-germanium quantum wells well width ranging from 50–500 A aimed at finding best alloy combination applications.
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