Method of forming silicon-contained crystal thin film
作者： Kiyoshi Ogata , Koji Miyake
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摘要: A method of forming a silicon-contained crystal thin film can efficiently form the relatively large thickness. In method, hydrogen ions are implanted into substrate. Voids formed by immersing ion-implanted substrate in melted metal liquid containing, e.g., silicon and indium for heating While pressing an ion-injected surface substrate, is heated to voids. By cooling liquid, supersaturated deposited on so that The divided void-formed position. Thereby, including layered portion obtained. thus obtained be adhered support if necessary.
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