作者: 健二 梶山 , Kenji Kajiyama
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摘要: PROBLEM TO BE SOLVED: To enable a crystalline base solar cell to be manufactured at low cost without wasting semiconductor by method in which hole made of implanted elements stratified mode deposited from distributed is formed cut off the for formation layer. SOLUTION: After ion implanting first conductivity type 2 with specific element 4 depth, bonded onto substrate 1. Next, cystalline heat treatment so as form 4a 2. layer 2a on 1 cutting region mode. second 5 inside or 2a. For example, specified hydrogen rare gas while depth not exceed 100μm.