作者: J. Steinhauser , S. Faÿ , N. Oliveira , E. Vallat-Sauvain , C. Ballif
DOI: 10.1063/1.2719158
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摘要: A comprehensive model for the electronic transport in polycrystalline ZnO: B thin films grown by low pressure chemical vapor deposition is presented. The optical mobilities and carrier concentration calculated from reflectance spectra using the Drude model were compared with the data obtained by Hall measurements. By analyzing the results for samples with large variation of grain size and doping level, the respective influences on the transport of potential barriers at grain boundaries and intragrain scattering could be separated …