Magnetic properties of Mn-doped ZnO diluted magnetic semiconductors
作者： Liu Xue-Chao , Zhang Hua-Wei , Zhang Tao , Chen Bo-Yuan , Chen Zhi-Zhan
DOI: 10.1088/1674-1056/17/4/036
关键词:
摘要: A series of Mn-doped ZnO films have been prepared in different sputtering plasmas by using the inductively coupled plasma enhanced physical vapour deposition. The show paramagnetic behaviour when they are deposited an argon plasma. Hall measurement indicates that ferromagnetism cannot be realized increasing electron concentration. However, room-temperature is obtained a mixed argon-nitrogen first-principles calculations reveal antiferromagnetic ordering favoured case substitution Mn2+ for Zn2+ without additional acceptor doping. N O (NO−) necessary to induce ferromagnetic couplings Zn-Mn-O system. hybridization between 2p and Mn 3d provides empty orbit around Fermi level. hopping electrons through can coupling. N-doped system possibly originates from charge transfer Mn3+ via NO−. key factor provided substituting O, rather than conductivity type or carrier
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