作者: Minghuan Cui , Cunfeng Yao , Tielong Shen , Lilong Pang , Yabin Zhu
DOI: 10.1016/J.NIMB.2017.03.127
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摘要: Abstract Pure tungsten samples were irradiated to 1.0 × 10 16 , 5.0 × 10 and 17 ions/cm 2 at room temperature with 500 200 keV helium ions, respectively, understand the growth of vacancy like defects in induced by irradiation. The doppler broadening spectroscopy slow positron annihilation was used characterize behavior defects, such as Helium n Vacancy m (i.e. He V ) complexes, When irradiation fluence is below size density show increasing trends fluences. decreases depths due amounts or n/m ratios complexes. reach certain values, increases. increases decreases. 500 keV grow larger. formation evolution mechanism complexes are discussed this paper on bases dpa levels, concentrations, C /dpa electronic energy loss depositions.