Temperature dependent defects evolution and hardening of tungsten induced by 200 keV He-ions
作者： M.H. Cui , Z.G. Wang , L.L. Pang , T.L. Shen , C.F. Yao
DOI: 10.1016/J.NIMB.2012.12.083
关键词:
摘要: Tungsten has been selected as one of the potential candidate materials to cover some parts divertor in future International Thermonuclear Experimental Reactor (ITER). The accumulation defects and He induced by neutron irradiation their impact on mechanical properties tungsten are very importance. In this work, high pure polycrystalline samples were implanted 200 keV He+ with a fluence 5 x 10(16) He+/cm(2) at temperatures room temperature (RT), 200, 400 800 degrees C. Vacancy-type detected all means positron annihilation spectroscopy. produced implantation exist damaged layer decorated atoms. At higher temperature, He-V complexes could grow larger through absorbing mobile vacancies. nano-hardness values measured nano-indentation technique. It is observed that hardening occurred for samples. With increasing from C C, change average hardness which lower than value RT tendency enhancement shallower degradation deeper layer. variations discussed be pinning effects different density or size. Published Elsevier B.V.
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