Vertical stacking of graphene in a field-effect transistor
作者： Aaron D. Franklin , Joshua T. Smith , Damon B. Farmer , Sataoshi Oida
DOI:
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摘要: A graphene field-effect transistor is disclosed. The includes a first sheet, gate layer coupled to the sheet and second opposite layer. configured influence an electric field within as well of sheet.
google.de 参考文章(16)
Jeffrey Sleight, Isaac Lauer, Josephine Chang, Graphene/Nanostructure FET with Self-Aligned Contact and Gate ,(2010)
Yu-Ming Lin, Jeng-Bang Yau, Graphene based switching device having a tunable bandgap ,(2012)
Andrew Marshall, Ashesh Parikh, Method for fabricating graphene transistors on a silicon or SOI substrate ,(2008)
Michael J. O'Connor, Jonathan W. Ward, Graphene Nanoelectric Device Fabrication ,(2010)
Alberto Valdes-Garcia, Yu-Ming Lin, Keith A. Jenkins, Self-aligned graphene transistor ,(2009)
Aaron Daniel Franklin, Zhihong Chen, Shu-Jen Han, Vertical stacking of carbon nanotube arrays for current enhancement and control ,(2010)
Yu-Ming Lin, Jeng-Bang Yau, Metal-Free Integrated Circuits Comprising Graphene and Carbon Nanotubes ,(2009)
Aaron Daniel Franklin, Zhihong Chen, Shu-Jen Han, Graphene Devices with Local Dual Gates ,(2015)
Alexander Badmaev, Yuchi Che, Chuan Wang, Chongwu Zhou, High performance field-effect transistors ,(2012)
Phaedon Avouris, Yu-Ming Lin, Damon B. Farmer, Yu Zhu, Graphene transistor with a self-aligned gate ,(2012)