Chapter 7 Critical Technologies for the Micromachining of Silicon

摘要: Publisher Summary This chapter discusses critical technologies for the micromachining of silicon. “Micromachining” is a term generally applied to wide range three-dimensional (3-D) structures that can be fabricated using techniques originally developed microelectronics industry. Principally, revolves around single-crystal or polycrystalline silicon (Si), although associated materials such as oxides, nitrides, glasses, polymeric materials, and metals are also necessary used. Other semiconductors III–V compound subject investigations. Various mechanisms wet-chemical anisotropic etching discussed in depth chapter. includes several very recent topics, innovative electrochemical thinning porous Si. New data presented on chemical formation micromirrors Si GaAs surfaces. The multiple use substrate (MU-STRATE) some detail possible means reaching into terabit/cm 3 logic element density. A method (signal-induced feedback treatment) analog e-beam testing actively modifying up billion devices few minutes way MU-STRATE.