Stability of 8-hydroxyquinoline aluminum films encapsulated by a single Al2O3 barrier deposited by low temperature atomic layer deposition
作者： Tony Maindron , Jean-Yves Simon , Emilie Viasnoff , Dominique Lafond
DOI: 10.1016/J.TSF.2012.07.043
关键词:
摘要: Abstract 100 nm thick 8‐AlQ 3 films deposited onto silicon wafers have been encapsulated by mean of low temperature atomic layer deposition Al 2 O (20 nm). Investigation the film evolution under storage test as harsh 65 °C/85% RH has investigated up to ~ 1000 h and no severe degradation could be noticed. The results compared raw AlQ which deteriorate far faster in same conditions. For that purpose, fluorescence measurements force microscopy used monitor while transmission electron image interface between . This concept bilayer /Al barrier finally tested an encapsulation organic light-emitting diode.
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