作者: Senlin Diao , Xiujuan Zhang , Zhibin Shao , Ke Ding , Jiansheng Jie
DOI: 10.1016/J.NANOEN.2016.11.051
关键词:
摘要: Abstract Zero-dimensional graphene quantum dots (GQDs) have lately intrigued intensive interest because of their great promise in energy, optoelectronic, and bio-imaging applications. Herein, we demonstrated the fabrication highly efficient GQDs/n-silicon heterojunction solar cells via a simple solution process. Owing to unique band structure, GQDs layer could not only serve as hole transport facilitate separation photo-generated electron-hole pairs, but also act electron blocking suppress carrier recombination at anode. Moreover, was used transparent top electrode for cells, ensuring light absorption collection. By adjusting sizes thickness layer, power conversion efficiency (PCE) high 12.35% under AM 1.5G irradiation achieved, which represented new record this new-type cell. The devices exhibited excellent stability air due chemical/physical graphene. successful achievement high-efficiency GQDs/Si opens up opportunities potential applications high-performance low-cost photovoltaics.