Physical Properties of Charge Transfer Salt (EDO-TTFBr2)2AsF6 in Mott Insulating State
作者： Naoki Yoneyama , Akira Miyazaki , Toshiaki Enoki , Eiji Ogura , Yoshiyuki Kuwatani
DOI: 10.1246/BCSJ.72.2423
关键词:
摘要: We have investigated the physical properties of a new charge transfer salt based on an asymmetric donor 4,5-dibromo-4′,5′-ethylenedioxy-tetrathiafulvalene (EDO-TTFBr2) whose crystal structure contains weakly dimerized stacking structure. This is considered to be in Mott insulating state vicinity metal-insulator boundary, taking account highly conductive semiconducting behavior and feature susceptibility explained by one-dimensional Heisenberg antiferromagnet model with S = 1/2 localized spin per dimer large exchange interaction about −190 K. The exceptionally small resistivity (0.06 Ω cm at room temperature) originate from strong inter-dimer integral. results ESR not only suggest antiferromagnetic transition 37 K, but also reflect electronic giving negligible contribution spin-lattice relaxation process.
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