Structural Studies and Valence Band Splitting Parameters in Ordered Vacancy Compound AgGa7Se12

摘要: The threefold absorption in the fundamental region of ternary chalcopyrite AgGa7Se12, an ordered defect compound AgGaSe2, is analyzed to elucidate three closely spaced band gaps its valence due lifting degeneracy Γ15 level. Hopfield’s quasi cubic model employed extract crystal-field and spin–orbit splitting parameters linear hybridisation orbitals for evaluating percentage contribution Ag d-orbital Ga Se p-orbitals p–d hybridization orbitals. observed optical properties are correlated with structural like deformation parameter, anion displacement anion–cation bond lengths that deduced from X-ray diffraction data. films studies prepared by a modified form Gunther’s temperature technique compositional analysis was done energy dispersive X-rays. photoelectron spectroscopy confirms formation while atomic force microscopic used surface morphological analysis. electrical resistivity these n-type semi-conducting assessed be ~5 Ωm found photosensitive.