Gallium-driven assembly of gold nanowire networks
作者： Mehdi M. Yazdanpanah , Steven A. Harfenist , Robert W. Cohn
DOI: 10.1063/1.1787938
关键词:
摘要: Nanowire networks of Au–Ga alloy are fabricated at temperatures between 220 and 300°C by application small drops liquid gallium to 10- 100-nm-thick gold films. As the drop spreads reacts with film, lamellar segregation gold-rich gallium-rich regions form fractal-like nanowires connected islands in specific zones concentric droplet. The wires subsequently suspended wet chemical etching that undercuts ∼10-nm-thick chromium adhesion layer silicon substrate. Suspended as long 6μm narrow 35nm diameter have been produced using this method.
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