Initializing, manipulating and storing quantum information with bismuth dopants in silicon

作者: Gavin W. Morley , Marc Warner , A. Marshall Stoneham , P. Thornton Greenland , Johan van Tol

DOI: 10.1038/NMAT2828

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摘要: A prerequisite for exploiting spins quantum data storage and processing is long spin coherence times. Phosphorus dopants in silicon (Si:P) have been favoured as hosts such because of measured electron times (T2) longer than any other the solid state: 14 ms at 7 K. Heavier impurities bismuth (Si:Bi) could be used conjunction with Si:P information proposals that require two separately addressable species. However, question whether incorporation much less soluble Bi into Si leads to defect species destroy has not addressed. Here we show schemes involving Si:Bi are indeed feasible time T2 exceeds 1 10 We polarized electrons hyperpolarized I=9/2 nuclear 209Bi, manipulating both pulsed magnetic resonance. The larger means a dopant provides 20-dimensional Hilbert space rather four dimensional an I=1/2 dopant.

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