Epitaxial graphene on SiC: from carrier density engineering to quasi-free standing graphene by atomic intercalation
作者： S Forti , U Starke
DOI: 10.1088/0022-3727/47/9/094013
关键词:
摘要: Epitaxial graphene (EG) on SiC has been proven to be an excellent material investigate the fundamental physical properties of and also directly implement new findings into devices realized versatile platform SiC. Within this framework, work aims review some recent major achievements accomplished in field EG SiC, related growth SiC(0 0 0 1) surface, control its doping level, decoupling from substrate intercalation foreign atomic species at interface.
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