作者: Sheng Liu , Changyi Li , Jeffrey J. Figiel , Steven R. J. Brueck , Igal Brener
DOI: 10.1039/C5NR01855B
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摘要: We report continuous, dynamic, reversible, and widely tunable lasing from 367 to 337 nm single GaN nanowires (NWs) by applying hydrostatic pressure up ∼7 GPa. The NW lasers, with heights of 4–5 μm diameters ∼140 nm, are fabricated using a lithographically defined two-step top-down technique. wavelength tuning is caused an increasing Γ direct bandgap precisely controllable subnanometer resolution. observed coefficients the NWs ∼40% larger compared microstructures same material or reported bulk values, revealing nanoscale-related effect that significantly enhances range this approach. This approach can be generally applied other semiconductor lasers potentially achieve full spectral coverage UV IR.