Top-down fabrication for III-nitride nanophotonics
作者： George T Wang , Benjamin Leung , Changyi Li , Miao-Chan Tsai , Sheng Liu
DOI: 10.1109/PHOSST.2017.8012662
关键词:
摘要: III-nitride based nanostructures have gained interest as nanoscale light sources in the UV to visible wavelengths. Here we present a top-down approach enable vertical, high aspect ratio III-nitride-based nanowires with controllable height, pitch, and diameter. Additionally, through use of orientation-dependent etch rate measurements, cross-sections such can be predicted controlled, which allow for manipulation optical properties. The fabrication lasing characteristics GaN-based fabricated by this will presented, along schemes single mode selection, polarization control, beam shaping, wavelength tuning. Finally, new method etching size-controlled InGaN quantum dots (QDs) using size effects.
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