Growth of Yttria-Stabilized Zirconia Thin Layer on Silicon Wafer Substrate (100) Using Pulsed Laser Deposition
作者： Agusutrisno , Abu Khalid Rivai , Edi Suharyadi , Mardiyanto Mardiyanto , M. A. Shulhany
DOI: 10.1109/ICIEE49813.2020.9276976
关键词:
摘要: Researches of a thin layer are one the main studies in materials on electronics. The deposition process yttria-stabilized zirconia (YSZ) film silicon wafer sub-strate (100) was carried out using pulsed laser (PLD). is grown for 50 minutes within frequency 10 Hz, pressure range 200-225 mTorr, Treatment temperature as deposit 800°C. Furthermore, samples were characterized an atomic force microscope (AFM), X-ray diffractometer (XRD), scanning electron – energy dispersive spectroscope (SEM-EDS). This research shows that formed contains Zr4+ and Y3+ with cubic tetragonal phase crystal structure. characterization roughness very smoothly formed, has 28 nm.
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