Structure fine de l'absorption à 9 μ des groupements Si2O dans le silicium a basse température

摘要: When studying the infrared absorption of Si2O group near 9 μ in silicon at low temperature and under high resolution, we observe up to 7 lines ; separate them 2 systems whose behaviour with is opposite. If this structure can be accounted for by interaction hindered rotation oxygen atom v3 vibration group, a value potential restricting less than 100 cm−1 obtained. In any case, observed spectrum connected equilibrium positions atom, separated an activation energy ≅ 10 cm−1, as inferred from dependence two systems. It should noted that narrowest exhibit width order instrumental line ( 0.5 cm−1).